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Recent investigations on the growth of antimony based semiconductors

Bhat, HL and Kumar, Vikram and Agarwal, SK (1998) Recent investigations on the growth of antimony based semiconductors. In: SPIE: International workshop on Physics of Semiconductor Devices, 16-20 Dec 1997, Delhi, India, pp. 221-227.

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Abstract

Investigations related to the bulk and thin film growth of two of the antimony based semiconductors, viz, GaSb and InSb are presented. High quality single crystals of GaSb and InSb were grown using vertical Bridgman technique. The influence of the shape of the melt-solid interface on the quality of the grown crystals is discussed. Various factors influencing the interface shape during growth are studied. Furthermore, the effects of temperature gradient (G) and ampoule lowering rate (v) on the composition and other properties of the gown crystals are investigated. Some preliminary studies on the growth of these antimonides by liquid phase epitaxy are also discussed

Item Type: Conference Paper
Additional Information: Copyright of this article belongs to Society of Photo-Optical Instrumentation Engineers (SPIE).
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 24 May 2007
Last Modified: 27 Aug 2008 12:39
URI: http://eprints.iisc.ernet.in/id/eprint/10016

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