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MOCVD epitaxy of GaAs/Ge heterostructures

Krupanidhi, SB and Hudait, MK and Modak, P and Hardikar, S and Kumar, Vikram and Agarwal, SK (1998) MOCVD epitaxy of GaAs/Ge heterostructures. In: International workshop on the Physics of Semiconductor Devices: IWPSD97, vol.1, 16-20 Dec. 1997, Delhi, India, pp. 262-270.

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Abstract

Compound semiconductors such as GaAs are becoming increasingly important in advanced technologies because of their intrinsically higher speeds, lower power requirements, optoelectronics applications and greater resistance to high energy radiation. Present paper deals with the growth of epitaxial GaAs layers by MOCVD and their subsequent characterization in terms of electrical and optical behavior. Silane and dimethyl-zinc were used as n- and p- type dopants respectively, while varying the growth temperature, V/III ratio and hydrogen flow rates. Electrochemical C-V profiler was used to carry out the depth profiling of doped samples. The impurity concentrations were homogeneous along the depth and exhibited good interfaces. Detailed discussion is presented in the direction of band gap shrinkage due to Zn and Si incorporation in p-type and n-type GaAs respectively, while interpreting the results in terms of vacancy control model. Discussion is further extended to close process-property correlation and their impact on the heterostructure behavior

Item Type: Conference Paper
Additional Information: Copyright of this article belongs to Narosa Publishing House.
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 21 May 2007
Last Modified: 27 Aug 2008 12:40
URI: http://eprints.iisc.ernet.in/id/eprint/10022

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