Dutta, PS and Sreedhar, AK and Bhat, HL and Dubey, GC and Kumar, Vikram and Dieguez, E (1995) Current transport properties of metal/hydrogenated amorphous silicon/GaSb structures. In: Applied Physics Letters, 67 (7). pp. 1001-1003.
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Hydrogenated amorphous silicon (a-Si:H) has been deposited on n- and p-GaSb by the plasma glow discharge technique. The electrical characteristics of metal/a-Si:H/GaSb structures are presented. The current transport in these structures is dictated by the barriers at the metal/a-Si:H and a-Si:H/ GaSb interfaces and the series resistance of the bulk a-Si:H interfacial layer. Space charge limited current in the interfacial layer gives rise to a voltage dependent resistance and increases the forward ‘‘turn-on’’ voltage. Furthermore, these structures exhibit extremely low reverse leakage currents and high reverse breakdown voltages. Significantly, rectifying junctions of a-Si:H/p-GaSb have been achieved with barrier heights of \sim 0.4 eV.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to American Institute of Physics.|
|Department/Centre:||Division of Physical & Mathematical Sciences > Physics|
|Date Deposited:||25 May 2007|
|Last Modified:||19 Sep 2010 04:35|
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