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Current transport properties of metal/hydrogenated amorphous silicon/GaSb structures

Dutta, PS and Sreedhar, AK and Bhat, HL and Dubey, GC and Kumar, Vikram and Dieguez, E (1995) Current transport properties of metal/hydrogenated amorphous silicon/GaSb structures. In: Applied Physics Letters, 67 (7). pp. 1001-1003.

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Abstract

Hydrogenated amorphous silicon (a-Si:H) has been deposited on n- and p-GaSb by the plasma glow discharge technique. The electrical characteristics of metal/a-Si:H/GaSb structures are presented. The current transport in these structures is dictated by the barriers at the metal/a-Si:H and a-Si:H/ GaSb interfaces and the series resistance of the bulk a-Si:H interfacial layer. Space charge limited current in the interfacial layer gives rise to a voltage dependent resistance and increases the forward ‘‘turn-on’’ voltage. Furthermore, these structures exhibit extremely low reverse leakage currents and high reverse breakdown voltages. Significantly, rectifying junctions of a-Si:H/p-GaSb have been achieved with barrier heights of \sim 0.4 eV.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to American Institute of Physics.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 25 May 2007
Last Modified: 19 Sep 2010 04:35
URI: http://eprints.iisc.ernet.in/id/eprint/10055

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