# Photo-thermal deflection and electrical switching studies on Ge–Te–I chalcohalide glasses

Pattanayak, Pulok and Manikandan, N and Paulraj, M and Asokan, S (2007) Photo-thermal deflection and electrical switching studies on Ge–Te–I chalcohalide glasses. In: Journal of Physics:Condensed Matter, 19 (3). 036224-8.

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## Abstract

Measurements on thermal diffusivity $(\alpha)$ and electrical switching studies have been undertaken on bulk, melt-quenched $Ge_{22}Te_{78-x}I_x (3\leq x \leq10)$ chalcohalide glasses. The thermal diffusivity values of $Ge_{22}Te_{78-x}I_x$ glasses lie in the range $0.09–0.02 cm^2 s^{-1}$, and are found to decrease with increase in iodine content. The variation of $\alpha$ with composition has been understood on the basis of fragmentation of the Ge–Te network with the addition of iodine. The composition x = 5 $(\overline{r}_c = 2.39)$, at which a cusp is seen in the composition dependence of thermal diffusivity, has been identified to be the inverse rigidity percolation threshold of the $Ge_{22}Te_{78-x}I_x$ system at which the network connectivity is completely lost. Further, $Ge_{22}Te_{78-x}I_x$ glasses are found to exhibit memory-type electrical switching. At lower iodine concentrations, a decrease is seen in switching voltages with an increase in iodine content, in comparison with the switching voltage of the $Ge_{22}Te_{78}$ base glass. The observed initial decrease in the switching voltages with the addition of iodine is due to the decrease in network connectivity. An increase is seen in switching voltages of $Ge_{22}Te_{78-x}I_x$ glasses at higher iodine contents, which suggests the domination of the metallicity factor of the additive atoms on the switching voltages at higher iodine proportions. It is also interesting to note that the composition dependence of the threshold voltages shows a slope change at x = 5, the inverse rigidity percolation threshold of the $Ge_{22}Te_{78-x}I_x$ system.

Item Type: Journal Article Copyright of this article belongs to Institute of Physics. Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU) 27 Jun 2007 19 Sep 2010 04:35 http://eprints.iisc.ernet.in/id/eprint/10103