Hudait, Mantu Kumar and Modak, Prasanta and Hardikar, Shyam and Krupanidhi, SB (1997) Effect of V/III ratio on the optical properties of MOCVD grown undoped GaAs layers. In: Solid State Communications, 103 (7). pp. 411-416.
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A detailed analysis of low temperature photoluminescence (PL) spectro- scopy on undoped high quality GaAs is presented. For undoped GaAs epitaxial layers grown by low pressure metal organic chemical vapor deposition under different V/III ratios, an optimum ratio corresponding to a minimum number of shallow impurities was clearly identified. The V/III ratio has strong effect on the optical properties of undoped GaAs epitaxial layers, When the V/III ratio was varied from 45 to 87, the electron concentration, n, of undoped GaAs increased with increasing V/III ratio. Below the V/III ratio of 45 in our case, the sample exhibited a p-type behavior, which has been identified by photoluminescence as well as depth profiling by Electra-chemical Capacitance Voltage (ECV) profiler.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Elsevier.|
|Department/Centre:||Division of Chemical Sciences > Materials Research Centre|
|Date Deposited:||23 Jun 2007|
|Last Modified:||19 Sep 2010 04:36|
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