Ramamoorthy, K and Kumar, K and Koinkar, Pankaj and Ganesan, K and Shah, Amit P and Sankaranarayanan, K and Ramasamy, P (2007) A novel in situ method for simultaneous growth of smart material single crystals and thin films. In: Smart Materials and Structures, 16 (1). pp. 83-88.
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Development of a novel in situ method for simultaneous growth of single crystals and thin films of a smart material spinel is achieved. Material to be grown as metal-incorporated single crystal and thin film was taken as a precursor and put into a bath containing acid as a reaction speed-up reagent (catalyst) as well as a solvent with a metal foil as cation scavenger. By this novel method, zinc aluminate crystals having hexagonal facets and thin films having single crystalline orientation were prepared from a single optimized bath. Properties of both crystals and thin films were studied using an x-ray diffractometer and EDAX. $ZnAl_2O_4$ is a well-known wide bandgap compound semiconductor ($E_g$ = 3.8 eV), ceramic, opto-mechanical and anti-thermal coating in aerospace vehicles. Thus a space gmr technique was found to be a new low cost and advantageous method for in situ and simultaneous growth of single crystals and thin films of a smart material.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Institute of Physics.|
|Department/Centre:||Division of Physical & Mathematical Sciences > Physics|
|Date Deposited:||14 Mar 2007|
|Last Modified:||19 Sep 2010 04:36|
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