ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Mobility limiting mechanisms in modulation doped Si/SiGe and Ge/SiGe heterostructures

Madhavi, S and Venkataraman, V (2000) Mobility limiting mechanisms in modulation doped Si/SiGe and Ge/SiGe heterostructures. In: Tenth International Workshop on the Physics of Semiconductor Devices, 14-18 Dec. 1999, New Delhi, India, pp. 407-410.

Full text not available from this repository. (Request a copy)

Abstract

In this paper we study the mobility limiting mechanisms in modulation doped Si/SiGe (2DEG) and Ge/SiGe (2DHG) modulation doped heterostructures both experimentally and theoretically. The mobility was measured by Hall measurements as a function of temperature. Using semiclassical Boltzmann transport theory we calculate the low temperature mobility in these structures and conclude that in the 2DEG samples it is limited by remote ionised impurity scattering and in the 2DHG samples it is limited by interface roughness scattering

Item Type: Conference Paper
Additional Information: Copyright of this article belongs to SPIE - The International Society for Optical Engineering
Keywords: Boltzmann equation;elemental semiconductors;Ge Si alloys; germanium;Hall mobility;impurity scattering;interface roughness;interface states;semiconductor heterojunctions;semiconductor materials;silicon;two dimensional electron gas
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 26 Jul 2007
Last Modified: 27 Aug 2008 12:43
URI: http://eprints.iisc.ernet.in/id/eprint/10317

Actions (login required)

View Item View Item