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Electron cyclotron resonance plasma assisted sputter deposition of boron nitride films

Rao, Mohan G and Krupanidhi, SB (1997) Electron cyclotron resonance plasma assisted sputter deposition of boron nitride films. In: Applied Physics Letters, 70 (5). pp. 628-630.

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Abstract

Boron nitride films have been deposited on p-type silicon substrates by rf sputtering in the presence of an electron cyclotron resonance (ECR) plasma at a temperature of 450°C. Structural phases were identified using IR spectroscopy and electrical characterization was carried out in the metal-insulator-semiconductor configuration. It was shown that the presence of ECR plasma enhanced the formation of cubic phase at substrate temperature as low as 450°C, along with hexagonal phase. The dielectric constant was found to be 6–8 and the resistivity was about $10^{12}$ V cm. The capacitance-voltage characteristics indicated good electronic interface with the presence of ECR plasma, with the density of states of about $1.18 X 10^{12} eV^{-1} cm^{-2}$. The density of states was found to be higher by a factor of 2 in the absence of ECR plasma.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to AIP.
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)
Date Deposited: 12 Mar 2007
Last Modified: 19 Sep 2010 04:36
URI: http://eprints.iisc.ernet.in/id/eprint/10335

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