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Study of pulsed laser deposited lead lanthanum titanate thin films

Venkateswarlu, P and Bharadwaja, SSN and Krupanidhi, SB (2001) Study of pulsed laser deposited lead lanthanum titanate thin films. In: Thin Solid Films, 389 (1-2). pp. 84-90.

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Abstract

Paraelectric lanthanum doped lead titanate (PLT) thin films for high permittivity material applications were grown on Pt-coated Si-substrates by the laser ablation technique. A rapid thermal annealing (RTA) process was adopted to induce crystallization and a polycrystalline fine microstructure was obtained. The dielectric properties, capacitance–voltage (C–V) characteristics and polarization hysteresis (P–E) with temperature were studied. The dielectric constant was approximately 720 while the dissipation factor was approximately 0.04 at room temperature for a $0.9-\mu m$ thick film at 100 kHz frequency. Hysteresis behavior was observed in C–V and P–E responses and was attributed to the presence of charge accumulation either in the grain boundaries or in the electrode–film interface. The charge storage density aspect was studied for DRAM applications and the obtained charge storage density at 6 V was $4.5 \mu C/cm^2$. The density of surface charge states was approximately $10^{13} cm^2/eV$ at room temperature and the effect of temperature and frequency was studied and correlated with the properties of the film.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier.
Keywords: Laser ablation;Dielectric properties;Annealing;Surface and interface states
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 29 Mar 2007
Last Modified: 19 Sep 2010 04:36
URI: http://eprints.iisc.ernet.in/id/eprint/10340

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