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Metal–insulator transition in boron-doped amorphous carbon films

Vishwakarma, PN and Subramanyam, SV (2007) Metal–insulator transition in boron-doped amorphous carbon films. In: Philosophical Magazine, 87 (6). pp. 811-821.

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Abstract

Boron-doped amorphous graphite-like carbon (GLC) films have been prepared with different boron concentrations. Electrical transport measurements in the temperature range 1.3–300 K on the films shows a doping-induced metal–insulator (MI) transition. On the metallic side of the transition, the experimental data are interpreted in terms of weak localization and the effect of electron–electron interactions. Data on the insulator side of transition are analyzed in terms of hopping conduction. Critical behaviour is observed near the transition, with the resistivity obeying a power-law temperature dependence.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Taylor & Francis
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 20 Apr 2007
Last Modified: 19 Sep 2010 04:36
URI: http://eprints.iisc.ernet.in/id/eprint/10434

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