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CVD of thin films of copper and cobalt from different precursors: growth kinetics and microstructure

Mane, Anil and Shalini, K and Anjana, Devi and Lakshmi, R and Dharmaprakash, MS and Mandar, Paranjape and Shivashankar, SA (2001) CVD of thin films of copper and cobalt from different precursors: growth kinetics and microstructure. In: Polycrystalline Metal and Magnetic Thin Films - 2000. Symposium, 25-27 April 2000, San Francisco, CA, USA, G6.11.1-G6.11.6.

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Abstract

The growth of thin films of Cu and Co by CVD using the β diketonate complexes of the metals, viz., the respective acetylacetonates, dipivaloylmethanates, and ketocarboxylates, are investigated. Film growth rate was measured as a function of CVD parameters such as substrate temperature and reactor pressure. Film microstructure was examined by optical microscopy, XRD, SEM, and STM. Electrical resistivity was measured as a function of temperature and film thickness. It was found that film microstructure is a function of the molecular structure of the precursor and of the other growth parameters. For example, Cu films from Cu(II) ethyl acetoacetate comprise uniform, fine grains which result in bulk electrical conductivity at a thickness as small as 75 nm. Though grown under nearly the same conditions, Cu films from Cu(II) dipivaloylmethanate are porous, with faceted, large crystallites. Cobalt films from Co(II) acetylacetonate are X-ray amorphous even at a deposition temperature of 450°C. It is possible, by choosing CVD parameters, to obtain metal films with microstructures appropriate to devices and to structures of very small dimensions

Item Type: Conference Paper
Additional Information: Copyright of this article belongs to Materials Research Society
Keywords: cobalt;copper;crystal microstructure;electrical resistivity;metallic epitaxial layers;MOCVD;optical microscopy;scanning electron microscopy;scanning tunnelling microscopy;vapour phase epitaxial growth;X ray diffraction
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 02 Jul 2008
Last Modified: 27 Aug 2008 12:44
URI: http://eprints.iisc.ernet.in/id/eprint/10462

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