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Antiferroelectric thin films for MEMS applications

Bharadwaja, SSN and Krupanidhi, SB (2001) Antiferroelectric thin films for MEMS applications. In: Third Asian Meeting on Ferroelectricty (AMF-3), 12-15 Dec. 2000, Hong Kong, China, pp. 39-44.

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Abstract

Antiferroelectric compositions have many potential applications in energy conversion and microelectromechanical systems. Electric field induced phase transitions between ferroelectric and antiferroelectric phases were studied in antiferroelectric lead zirconate and modified lead zirconate titanate stannate family thin films for various smart system applications. Thin films of various antiferroelectric thin film compositions such as $PbZrO_3$, Nb- and La-modified lead zirconate titanate stannate were processed by the pulsed excimer laser ablation technique. Dielectric, hysteresis, pyroelectric and switching properties were studied in detail for a new generation of functional materials. A comparative study of functional properties is presented with these antiferroelectric compositions in comparison with the conventional ferroelectric compositions

Item Type: Conference Paper
Additional Information: Copyright of this article belongs to Gordon & Breach
Keywords: antiferroelectric materials;dielectric hysteresis;ferroelectric switching;ferroelectric thin films;ferroelectric transitions;lanthanum compounds;lead compounds;micromechanical devices;niobium compounds;pulsed laser deposition;pyroelectricity
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 09 Aug 2007
Last Modified: 27 Aug 2008 12:44
URI: http://eprints.iisc.ernet.in/id/eprint/10464

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