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Leakage current behavior in pulsed laser deposited $Ba(Zr_{0.05}Ti_{0.95})O_3$ thin films

Mukherjee, Arnab and Victor, P and Parui, J and Krupanidhi, SB (2007) Leakage current behavior in pulsed laser deposited $Ba(Zr_{0.05}Ti_{0.95})O_3$ thin films. In: Journal of Applied Physics, 101 (3). 034106:1-6.

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Abstract

Barium zirconium titanate $[Ba(Zr_{0.05}Ti_{0.95})O_3, BZT]$ thin films were prepared by pulsed laser ablation technique and dc leakage current conduction behavior was extensively studied. The dc leakage behavior study is essential, as it leads to degradation of the data storage devices. The current-voltage (I-V) of the thin films showed an Ohmic behavior for the electric field strength lower than 7.5 MV/m. Nonlinearity in the current density-voltage (J-V) behavior has been observed at an electric field above 7.5 MV/m. Different conduction mechanisms have been thought to be responsible for the overall I-V characteristics of BZT thin films. The J-V behavior of BZT thin films was found to follow Lampert's theory of space charge limited conduction similar to what is observed in an insulator with charge trapping moiety. The Ohmic and trap filled limited regions have been explicitly observed in the J-V curves, where the saturation prevailed after a voltage of 6.5 V referring the onset of a trap-free square region. Two different activation energy values of 1.155 and 0.325 eV corresponding to two different regions have been observed in the Arrhenius plot, which was attributed to two different types of trap levels present in the film, namely, deep and shallow traps.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to the American Institute of Physics.
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 09 Apr 2007
Last Modified: 19 Sep 2010 04:36
URI: http://eprints.iisc.ernet.in/id/eprint/10474

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