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Antiferroelectric lead zirconate thin films by excimer laser ablation

Bharadwaja, SSN and Krupanidhi, SB (2001) Antiferroelectric lead zirconate thin films by excimer laser ablation. In: Twelfth International Symposium on Integrated Ferroelectrics, 12-15 March 2000, Aachen, Germany, pp. 249-259.

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Abstract

Utilization of antiferroelectric thin films was proposed for high charge storage capacitors and transducer applications. The volume changes that are associated with the AFE [right double arrow] FE and FE [right double arrow] AFE phases are high enough to use them in MEMs device technology. Lead zirconate was the first identified antiferroelectric compound with a reported dielectric phase transition temperature of [similar to] 230°C. In this article, deposition of lead zirconate thin films by a pulsed excimer laser ablation technique is reported. The antiferroelectric nature of the lead zirconate thin films were confirmed by the presence of double hysteresis loop in polarization vs. applied electric field response as well as double butterfly behavior in capacitance vs. voltage characteristics. The variations in the polarization hysteresis with temperature were elucidated in detail. The switching times between the field induced FE and AFE phases (backward switching) were studied at various applied electric fields

Item Type: Conference Paper
Additional Information: Copyright of this article belongs to Taylor and Francis Inc.
Keywords: antiferroelectric materials;capacitance;dielectric hysteresis;dielectric polarisation;ferroelectric Curie temperature;ferroelectric switching;ferroelectric thin films;lead compounds;pulsed laser deposition
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 16 Aug 2007
Last Modified: 27 Aug 2008 12:45
URI: http://eprints.iisc.ernet.in/id/eprint/10496

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