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A study of nucleation and growth in MOCVD: The growth of thin films of alumina

Singh, MP and Mukhopadhayay, S and Devi, A and Shivashankar, SA (2001) A study of nucleation and growth in MOCVD: The growth of thin films of alumina. In: Growth, Evolution and Properties of Surfaces, Thin Films and Self-Organized Strutures, Nov 27-Dec 1 2000, Boston, MA, P6471-P6476.

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Abstract

We have studied the nucleation and growth of alumina by metalorganic chemical vapor deposition (MOCVD). The deposition of alumina films was carried out on Si(100) in a horizontal, hot-wall, low pressure chemical vapor deposition (CVD) reactor, using aluminum acetylacetonate ${Al(acac)_3}$ as the CVD precursor. We have investigated growth of alumina films as a function of different CVD parameters such as substrate temperature and total reactor pressure during film growth. Films were characterized by optical microscopy, X-ray diffractometry (XRD), scanning electron microscopy (SEM), cross-sectional SEM, and secondary ion mass spectrometry (SIMS) compositional depth profiling. The chemical analysis reveals that the carbon is present throughout the depth of the films.

Item Type: Conference Paper
Additional Information: Copyright of this article belongs to Materials Research Society
Keywords: Alumina;Film growth;Nucleation;Metallorganic chemical vapor deposition;Semiconducting silicon;Chemical reactors;Optical microscopy;Scanning electron microscopy;Secondary ion mass spectrometry;X ray diffraction analysis
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 16 Aug 2007
Last Modified: 27 Aug 2008 12:45
URI: http://eprints.iisc.ernet.in/id/eprint/10505

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