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AC electrical property studies on $SrBi_2(Ta_{0.5}Nb_{0.5})_2O_9$ thin films by excimer laser ablation

Bhattacharyya, S and Krupanidhi, SB (2001) AC electrical property studies on $SrBi_2(Ta_{0.5}Nb_{0.5})_2O_9$ thin films by excimer laser ablation. In: Twelfth International Symposium on Integrated Ferroelectrics, 12-15 March 2000, Aachen, Germany, pp. 793-811.

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Abstract

Thin films of $SrBi_2Nb_2O_9$ (SBN) were grown using pulsed laser ablation. A low substrate temperature deposition was chosen to ensure good film substrate interface, and hence good ferroelectric property. A nearly polycrystalline structure was achieved after ex-situ annealing. The lower switching voltage was obtained by lowering the thickness, which did not affect the insulating nature of the film at all. The hysteresis results showed an excellent square shaped loop with $P_r=15 μC/cm$ and $E_c=75 kV/cm$ respectively. The response of the film to external ac stimuli was studied at different temperatures, and it showed that ac conductivity values in the limiting case are in close agreement with de values, and correspond to oxygen vacancy motion

Item Type: Conference Paper
Additional Information: Copyright of this article belongs to Gordon & Breach
Keywords: annealing;bismuth compounds;dielectric hysteresis;ferroelectric materials;ferroelectric switching;ferroelectric thin films;ionic conductivity;pulsed laser deposition;strontium compounds;vacancies (crystal)
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 17 Aug 2007
Last Modified: 27 Aug 2008 12:45
URI: http://eprints.iisc.ernet.in/id/eprint/10530

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