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Oriented Growth of Thin Films of Samarium Oxide by MOCVD

Shalini, K and Shivashankar, SA (2002) Oriented Growth of Thin Films of Samarium Oxide by MOCVD. In: Novel Materials and Processes for Advanced CMOS. Symposium, 2-4 Dec. 2002, Boston, MA, USA, pp. 167-172.

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Abstract

Thin films of samarium oxide, $Sm_2O_3$, have been grown on Si(100) and fused quartz by low-pressure MOCVD using an adducted β-diketonate precursor developed in house. It is found that the nature of the film grown is strongly dependent on substrate temperature. As examined by X-ray diffraction, the films of $Sm_2O_3$ grown at lower temperatures (~550°C) on fused quartz are cubic and display a random grain orientation, while they become highly oriented in the (111) direction as the growth temperature is increased (to 625°C). On Si(100), highly oriented films of cubic $4Sm_2O_3$ are obtained at a substrate temperature of 625°C. When the growth temperature is raised, the phase changes to monoclinic. The morphology of the films grown on both quartz and Si(100) substrates has been studied by scanning electron microscopy and atomic force microscopy. The growth of strongly oriented $Sm_2O_3$ on the disordered surface of fused quartz may be interpreted as being driven by the minimization of surface energy

Item Type: Conference Paper
Additional Information: Copyright of this article belongs to Material Research Society.
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 16 Jul 2007
Last Modified: 16 Jan 2012 04:45
URI: http://eprints.iisc.ernet.in/id/eprint/10637

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