Gurumurthy, S and Sreedhar, AK and Bhat, HL and Sundersheshu, B and Bagai, RK and Kumar, V (1995) Hydrogen passivation of shallow dopants in indium doped bulk CdTe. In: Symposium Defect and Impurity Engineered Semiconductors and Devices, 17-21 April 1995, San Francisco, CA, USA, pp. 423-428.
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Official URL: http://www.researchgate.net/publication/28602037_H...
Abstract
Hydrogen passivation effects in In doped n-CdTe upon exposure to rf hydrogen plasma have been studied by electrical and photoluminescence measurements. Shallow dopant passivation of approximately an order of magnitude at 150°C and 50% at 170°C is observed. No visual damage is seen. Reverse bias annealing effects are also studied. Results are discussed
| Item Type: | Conference Paper |
|---|---|
| Additional Information: | Copyright of this article belongs to Materials Research Society. |
| Keywords: | doped n-CdTe;Hydrogen passivation effects;photoluminescence measurements;rf hydrogen plasma;visual damage |
| Department/Centre: | Division of Physical & Mathematical Sciences > Physics |
| Date Deposited: | 17 Sep 2007 |
| Last Modified: | 10 Jan 2012 10:07 |
| URI: | http://eprints.iisc.ernet.in/id/eprint/10883 |
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