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Preparation and characterisation of sprayed tin sulphide films grown at different precursor concentrations

Reddy, Koteeswara N and Reddy, Ramakrishna KT (2007) Preparation and characterisation of sprayed tin sulphide films grown at different precursor concentrations. In: Materials Chemistry and Physics, 102 (1). pp. 13-18.

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Abstract

Tin sulphide films have been grown by spray pyrolysis technique at different precursor concentrations varied in the range, 0.01–0.2 M keeping other deposition parameters constant. The physical properties of the deposited films were systematically studied in relation to the precursor concentration. The studies indicated that the films grown in the precursor concentration range, 0.09–0.13 M were nearly stoichiometric with the Sn, S ratio of 1.06 and exhibited only SnS phase with a strong (1 1 1) preferred orientation that belongs to the orthorhombic crystal structure. These single-phase films showed an average electrical resistivity of 32.9 \Omega cm, Hall mobility of $139 cm^2 V^{-1} s^{-1}$ and carrier density of $\sim 10^{15} cm^{-3}$. These films had an average optical band gap of 1.32 eV with an absorption coefficient greater than $10^4 cm^{-1}$. These properties demonstrated that single-phase SnS films could be used as an absorber layer in the fabrication of heterojunction solar cells.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier.
Keywords: Tin sulphide;Thin films;Spray pyrolysis;Compositional analysis; Structural analysis;Surface analysis;Electrical and optical properties;
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 10 May 2007
Last Modified: 19 Sep 2010 04:37
URI: http://eprints.iisc.ernet.in/id/eprint/10891

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