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Pulsed laser deposition of indium antimonide

Ventakaraghavan, R and Satyalakshmi, KM and Rao, KSRK and Sreedhar, AK and Hegde, MS and Bhat, HL (1996) Pulsed laser deposition of indium antimonide. In: Bulletin of Materials Science, 19 (1). pp. 123-129.

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Abstract

Single crystalline oriented films of indium antimonide have been grown on cadmium telluride substrates by the pulsed laser deposition techniques. The films were (111) oriented which is the substrate orientation. The composition of the grown films were found to deviate from that of the target owing to loss of antimony during evaporation. This deviation from stoichiometry led to film-substrate reaction, resulting in mixed interface. The antimony deficiency in the films were controlled by correcting the stoichiometry, which led to avoiding mixed interfaces. The stoichiometric films showed good surface morphology and well defined sharp interfaces. The IR transmission spectrum showed sharp band to band absorption and effective detection in the MWIR.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Indian Academy of Sciences.
Keywords: PLD:indium antimonide;morphology;interface;In2T%;InTe.
Department/Centre: Division of Chemical Sciences > Solid State & Structural Chemistry Unit
Date Deposited: 17 Sep 2007
Last Modified: 11 Jan 2012 05:15
URI: http://eprints.iisc.ernet.in/id/eprint/10898

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