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Compositional dependence of high pressure resistivity behaviour of Cu-Ge-Te glasses

Ramesh, K and Asokan, S and Sangunni, KS and Gopal, ESR (1996) Compositional dependence of high pressure resistivity behaviour of Cu-Ge-Te glasses. In: Physics and Chemistry of Glasses, 37 (5). 217- 220.

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Official URL: http://en.scientificcommons.org/57611390

Abstract

Electrical resistivity measurements under pressures at ambient and low temperatures have been carried out on bulk, melt quenched $Cu_xGe_{15}Te_{85-x}$ glasses (2<x<10) in an opposed anvil set up. The resistivities of these samples are found to decrease continuously with pressure, changing by about six orders of magnitude around 4 GPa pressure The variation of conductivity activation energy with pressure also confirms the continuous metallisation of Cu-Ge-Te samples. The composition dependence of properties such as resistivity at ambient conditions, the pressure derivative of resistance (dp/dp), activation energy for electrical conduction at different pressures, etc., is found to exhibit anomalies at the composition 5 at% Cu. These results are explained on the basis of the rigidity percolation in chalcogenide network glasses.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Society of Glass Technology.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 01 Jul 2008
Last Modified: 11 Jan 2012 06:23
URI: http://eprints.iisc.ernet.in/id/eprint/10931

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