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Structure and ferroelectric properties of $Bi_2VO_{5.5}$ thin films by laser deposition

Prasad, KVR and Satyalakshmi, KM and Varma, KBR and Mallya, RM and Hegde, MS (1994) Structure and ferroelectric properties of $Bi_2VO_{5.5}$ thin films by laser deposition. In: 8th IUPAP International Meeting on Ferroelectricity: IMF-8, 8-13 Aug. 1993, Gaithersburg, MD, USA, pp. 61-66.

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Abstract

c-axis oriented thin films of $Bi_2VO_{5.5}$ (BVO), an n=1 member of the Aurivillius family, have been grown on $SrTiO_3$(STO) by pulsed laser deposition. Metallic $LaNiO_3$(LNO) films have been grown on STO and $SiO_2/Si(100)$ substrates; c-axis oriented BVO have been deposited on the lattice matched LNO/STO and $LNO/SiO_2/Si$ where the LNO film acts as an electrode. Trilayer structures, Au/BVO/LNO/STO, LNO/BVO/LNO/STO and Au/BVO/LNO/$SiO_2$/Si have been fabricated and ferroelectric properties of BVO have been confirmed from hysteresis loop measurements. The remnant polarization and coercive field are about $4×10^{-8} C/cm2$ and 25 kV/cm respectively. The dielectric constant of the film was comparable to that of bulk BVO

Item Type: Conference Paper
Additional Information: Copyright of this article belongs to Taylor and Francis Group.
Keywords: bismuth compounds;crystal structure;dielectric hysteresis; dielectric polarisation;ferroelectric materials; ferroelectric thin films;permittivity;pulsed laser deposition
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 19 Nov 2007
Last Modified: 11 Jan 2012 09:58
URI: http://eprints.iisc.ernet.in/id/eprint/11046

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