ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Properties of GaAs:V grown by liquid phase epitaxy

Balasubramanian, Sathya and Kumar, V (1992) Properties of GaAs:V grown by liquid phase epitaxy. In: Semiconductor Science and Technology, 74 (8). pp. 1117-1118.

[img] PDF
properties.pdf
Restricted to Registered users only

Download (152Kb) | Request a copy

Abstract

GaAs grown by liquid phase epitaxy (LPE) and free from deep levels is well suited for studying vanadium-related levels in bulk GaAs. LPE growth of GaAs:V was carried out and it is found from deep-level transient spectroscopy (DLTS) that vanadium gives rise to an electron trap at 0.19±0.01 eV below the conduction band edge with a capture cross section of $4X10^{-16} cm^2$. This could be a level different from the electron trap at 0.14 eV reported for LEC-grown GaAs:V due to the formation of different complexes under different growth conditions.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to IOP Publishing
Keywords: deep level transient spectroscopy;electron traps;gallium arsenide;III-V semiconductors;liquid phase epitaxial growth;vanadium
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 11 Jan 2008
Last Modified: 19 Sep 2010 04:38
URI: http://eprints.iisc.ernet.in/id/eprint/11140

Actions (login required)

View Item View Item