Balasubramanian, S and Kumar, V and Balasubramanian, N and Premachandran, V (1992) Passivation of surface and bulk defects in InP. In: Defect Engineering in Semiconductor Growth, Processing and Device Technology Symposium, 26 April-1 May 1992, San Francisco, CA, USA, pp. 413-418.Full text not available from this repository.
The effect of sulfur and hydrogen plasma treatment on the Schottky barrier and photoluminescence (PL) properties of p-InP is reported. Both the treatments increase the barrier height of Au/p-InP diodes and band to band PL. This is explained as being due to a shift in the surface Fermi level position towards the P vacancy related pinning level in the top half of the band gap. The $H^+$ treatment passivates the shallow and deep levels as observed from the C-V depth profile and PL respectively.
|Item Type:||Conference Paper|
|Additional Information:||Copyright of this article belongs to Materials Research Society .|
|Keywords:||deep levels;defect electron energy states;Fermi level; hydrogen;III-V semiconductors;impurity electron states; indium compounds;luminescence of inorganic solids; passivation;photoluminescence;Schottky effect;sulphur; surface electron states;vacancies (crystal);zinc|
|Department/Centre:||Division of Physical & Mathematical Sciences > Physics|
|Date Deposited:||11 Jan 2008|
|Last Modified:||12 Jan 2012 07:14|
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