Guruvenket, S and Ghatak, Jay and Satyam, PV and Rao, Mohan G (2005) Characterization of bias magnetron-sputtered silicon nitride films. In: Thin Solid Films, 478 (2). pp. 256-260.
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Influence of the deposition parameters and the substrate bias voltage on the optical, compositional and the surface properties of DC magnetron-sputtered silicon nitride thin films are studied. Silicon nitride thin films are deposited on silicon (100) and quartz substrates at different partial pressures of nitrogen and discharge currents. The variation in the refractive index and the optical band gap of these films is studied. Compositional variation has been studied using Rutherford backscattering spectroscopy (RBS). Silicon nitride thin films deposited at $3 \times 10^-^2$ Pa partial pressure of nitrogen with $2.5 mA/cm^2$ cathode current density showed an optical band gap of 4.3 eV and refractive index of 2.04 (at 650 nm). Nitrogen to silicon ratio in the film is 1.31, and the roughness of the films is 2.3 nm. Substrate bias during deposition helped in changing the optical properties of the films. Substrate bias of -60V resulted in films having near stoichiometry with N/Si ratio 1.32, and the optical band gap, refractive index, and the roughness are 4.8 eV, 1.92 and 0.78 nm, respectively.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Elsevier.|
|Keywords:||Magnetron sputtering;Silicon nitride;Ion-assisted deposition;Substrate bias;Rutheford backscattering|
|Department/Centre:||Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)|
|Date Deposited:||20 Jun 2007|
|Last Modified:||19 Sep 2010 04:38|
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