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Estimation of trap concentration in linearly graded junctions using DLTS

Rao, Koteswara KSR and Kumar, V (1990) Estimation of trap concentration in linearly graded junctions using DLTS. In: Physica Status Solidi A, 117 (1). pp. 251-257.

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Official URL: http://onlinelibrary.wiley.com/doi/10.1002/pssa.22...

Abstract

A method is proposed to estimate the deep trap concentration in a linearly graded junction from DLTS. The deep impurity is assumed to be uniformly distributed and much smaller in concentration than the shallow impurities. The effects of the edge-region and the zero bias depletion region are important and included in this model. Es wird eine Methode vorgeschlagen, aus DLTS die Konzentration tiefer Haftstellen in einem linearen Ubergang zu berechnen. Es wird angenommen, da$\beta$ die tiefe Storstelle gleichformig verteilt ist und in vie1 geringerer Konzentration als die flachen Storstellen vorliegt. Die Einfliisse des Kantenbereichs und des Verarmungsbereichs ohne Vorspannung sind wesentlich und werden in diesem Modell einbegriffen.

Item Type: Journal Article
Additional Information: Copyright of the article belongs to John Wiley and Sons.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 28 Jun 2007
Last Modified: 17 Jan 2012 09:31
URI: http://eprints.iisc.ernet.in/id/eprint/11303

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