Mandal, Hiranmoy and Nagaraju, J (2007) GaAs/Ge and silicon solar cell capacitance measurement using triangular wave method. In: Solar Energy Materials and Solar Cells, 91 (8). pp. 696-700.
GaAs_Ge_and_silicon.pdf - Published Version
Restricted to Registered users only
Download (207Kb) | Request a copy
The capacitance of GaAs/Ge and silicon (BSFR) solar cells are measured at different temperature ranging from 288 to 338K under dark condition using triangular wave method. It is a frequency domain technique. In the proposed method, the solar cells are biased externally using DC voltage at the desired operating voltage and the AC triangle wave small signal of desired amplitude with variable frequencies are applied. The resultant AC current of the device is measured and the cell capacitance is calculated. GaAs/Ge solar cell has shown only transition capacitance throughout its operating voltage while silicon (BSFR) solar cell exhibited both transition and diffusion capacitances. It is a direct and simple measurement technique in comparison to impedance spectroscopy and other bridge methods.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Elsevier Science.|
|Keywords:||Solar cells;Capacitance;Triangular wave method|
|Department/Centre:||Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)|
|Date Deposited:||17 Jul 2007|
|Last Modified:||30 Jan 2012 06:34|
Actions (login required)