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Effect of grain boundaries on the local electronic transport in nanostructured films of colossal magnetoresistive manganites

Kar, S and Sarkar, J and Ghosh, B and Raychaudhuri, AK (2007) Effect of grain boundaries on the local electronic transport in nanostructured films of colossal magnetoresistive manganites. In: Journal of Nanoscience and Nanotechnology, 7 (6). pp. 2051-2054.

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Official URL: http://www.aspbs.com/jnn/

Abstract

We have studied the spatially resolved local electronic properties of nanostructured films of a colossal magnetoresistive (CMR) material by local conductance mapping (LCMAP) using a variable temperature scanning tunneling microscope (STM), as a function of temperature and magnetic field. The experiments were carried out on nanostructured (NS) films of rare-earth hole doped manganites like $La_{0.67}Sr_{0.33}MnO_3 (LSMO)$, (prepared by Chemical Solution Deposition (CSD)) having average grain sizes around 100 nm or less. Due to the presence of a large number of natural grain boundaries (GBs), these films exhibit interesting transport properties that are not observed in single crystals and epitaxial films of the same composition, such as low field magneto resistance (LFMR), and significant MR at higher fields over the entire temperature range. Spatially resolved measurements of electronic properties, like the LCMAP, traces the contribution of the grain boundaries to the electronic transport in these NS films. It is found that the application of a low magnetic field enhances the DOS in the GB region, leading to the observed low field response of the MR.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to American Scientific Publishers.
Keywords: Manganites;Scanning Tunneling Microscopy;Grain Bonudaries; Colossal Magneto-Resistance
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 06 Aug 2007
Last Modified: 02 Feb 2012 09:38
URI: http://eprints.iisc.ernet.in/id/eprint/11656

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