Kubair, DV and Spearing, SM (2007) Cohesive zone model for direct silicon wafer bonding. In: Journal of Physics D-Applied Physics, 40 (10). pp. 3070-3076.
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Direct silicon wafer bonding and decohesion are simulated using a spectral scheme in conjunction with a rate-dependent cohesive model. The cohesive model is derived assuming the presence of a thin continuum liquid layer at the interface. Cohesive tractions due to the presence of a liquid meniscus always tend to reduce the separation distance between the wafers, thereby opposing debonding, while assisting the bonding process. In the absence of the rate-dependence effects the energy needed to bond a pair of wafers is equal to that needed to separate them. When rate-dependence is considered in the cohesive law, the experimentally observed asymmetry in the energetics can be explained. The derived cohesive model has the potential to form a bridge between experiments and a multiscale- modelling approach to understand the mechanics of wafer bonding.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this artricle belongs to Institute of Physics(IOP).|
|Department/Centre:||Division of Mechanical Sciences > Aerospace Engineering (Formerly, Aeronautical Engineering)|
|Date Deposited:||14 Aug 2007|
|Last Modified:||19 Sep 2010 04:39|
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