ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Cohesive zone model for direct silicon wafer bonding

Kubair, DV and Spearing, SM (2007) Cohesive zone model for direct silicon wafer bonding. In: Journal of Physics D-Applied Physics, 40 (10). pp. 3070-3076.

[img] PDF
Cohesive-97.pdf
Restricted to Registered users only

Download (228Kb) | Request a copy

Abstract

Direct silicon wafer bonding and decohesion are simulated using a spectral scheme in conjunction with a rate-dependent cohesive model. The cohesive model is derived assuming the presence of a thin continuum liquid layer at the interface. Cohesive tractions due to the presence of a liquid meniscus always tend to reduce the separation distance between the wafers, thereby opposing debonding, while assisting the bonding process. In the absence of the rate-dependence effects the energy needed to bond a pair of wafers is equal to that needed to separate them. When rate-dependence is considered in the cohesive law, the experimentally observed asymmetry in the energetics can be explained. The derived cohesive model has the potential to form a bridge between experiments and a multiscale- modelling approach to understand the mechanics of wafer bonding.

Item Type: Journal Article
Additional Information: Copyright of this artricle belongs to Institute of Physics(IOP).
Department/Centre: Division of Mechanical Sciences > Aerospace Engineering (Formerly, Aeronautical Engineering)
Date Deposited: 14 Aug 2007
Last Modified: 19 Sep 2010 04:39
URI: http://eprints.iisc.ernet.in/id/eprint/11703

Actions (login required)

View Item View Item