Electrical switching behavior of bulk As-Te-Si glasses: Composition dependence and topological effects

Anbarasu, M and Asokan, S (2004) Electrical switching behavior of bulk As-Te-Si glasses: Composition dependence and topological effects. In: Applied Physics A: Materials Science & Processing, 80 (2). pp. 249-252.

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Abstract

The current-voltage characteristics and electrical switching behavior of bulk $As_{30}Te_{70-x}Si_x (2 \leq x \leq 22)$ and $As_{40}Te_{60-x}Si_x (2 \leq x \leq 22)$ glasses were investigated over a wide range of compositions. The glasses studied were found to exhibit a current-controlled negative-resistance behavior and memory switching. Further, the switching voltage $(V_t)$ is found to increase linearly with sample thickness in the range of 0.15-0.45 mm, and it decreases linearly with temperature (300-353 K). The variation of the switching voltage $V_t$ of As-Te-Si glasses exhibits a sharp slope change at an average coordination number $\langle r \rangle = 2.46$ (for both tie lines), which is assocd. with the rigidity percolation in the system. Further, a minimum is seen in the switching voltage $V_t$ at an average coordination numebr $\langle r \rangle = 2.66$, which is likely to be the chemical threshold of the system.

Item Type:	Journal Article
Additional Information:	Copyright of this article belongs to Springer.
Department/Centre:	Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)
Date Deposited:	25 Oct 2007
Last Modified:	19 Sep 2010 04:40
URI:	http://eprints.iisc.ernet.in/id/eprint/12356

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