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Studies on the optical band gap and cluster size of the polyaniline thin films irradiated with swift heavy Si ions

Saravanan, S and Anantharaman, MR and Venkatachalam, S and Avasthi, DK (2007) Studies on the optical band gap and cluster size of the polyaniline thin films irradiated with swift heavy Si ions. In: Vacuum, 86 (1). pp. 56-60.

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Abstract

Polyaniline thin films prepared by RF plasma polymerisation were irradiated with 92 MeV Si ions for various fluences of $1\times 10^{11}$,$1\times10^{12}$ and $1\times 10^{13}$ $ions/cm^2$. FTIR and UV–vis–NIR measurements were carried out on the pristine and Si ion irradiated polyaniline thin films for structural evaluation and optical band gap determination. The effect of swift heavy ions on the structural and optical properties of plasma-polymerised aniline thin film is investigated. Their properties are compared with that of the pristine sample. The FTIR spectrum indicates that the structure of the irradiated sample is altered. The optical studies show that the band gap of irradiated thin film has been considerably modified. This has been attributed to the rearrangement in the ring structure and the formation of Ctriple bond; length of mdash C \equiv C terminals. This results in extended conjugated structure causing reduction in optical band gap.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier.
Keywords: Thin films;Polymers;Ion irradiation;FTIR;Optical band gap
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 29 Oct 2007
Last Modified: 19 Sep 2010 04:41
URI: http://eprints.iisc.ernet.in/id/eprint/12395

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