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Low pressure MOCVD of $Er_2O_3$ and $Gd_2O_3$ films

Singh, MP and Shripathi, T and Shalini, K and Shivashankar, SA (2007) Low pressure MOCVD of $Er_2O_3$ and $Gd_2O_3$ films. In: Materials Chemistry and Physics, 105 (2-3). pp. 433-441.

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Abstract

In this paper, we present a comparative study of microstructure, crystallinity, and physical properties of MOCVD-grown $Er_2O_3$ and $Gd_2O_3$ films, which are grown under identical conditions and using analogous precursors. They are characterized by the variety of techniques for their structure and properties. As-grown films were polycrystalline. Incorporation of heteroatomic species into the film's matrix, such as carbon, was dependent onto the oxides types and film's growth conditions. $Er_2O_3$ film displays 5.8 eV and $Gd_2O_3$ film exhibit 5.4 eV bandgap. Electrical characterizations show that the as-grown films were leaky. Thin films of $Er_2O_3$ display similar properties as observed in their thick counterparts, which manifest that it is possible to scale down these films for potential uses.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier.
Keywords: Rare earth oxides;MOCVD;Microstructure;Optical;Electrical properties;
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 19 Nov 2007
Last Modified: 19 Sep 2010 04:41
URI: http://eprints.iisc.ernet.in/id/eprint/12546

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