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Photoemission study of porous silicon

Roy, A and Chainani, A and Sarma, DD and Sood, AK (1992) Photoemission study of porous silicon. In: Applied Physics Letters, 61 (14). pp. 1655-1657.

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Abstract

We report x-ray photoelectron spectra from a porous silicon film (PSF) with a photoluminescence peak at 1.8 eV, as a function of argon ion etching time to probe the composition in the surface and the subsurface regions. The results clearly indicate that the surface layer is essentially a fluorine admixed $SiO_2$ phase, while the Si:O:F composition of the subsurface region 2:1:0.2. With the possibility of the existence of hydrogen in this composition it appears that beyond the highly oxidized surface, PSF is a fluorine substituted siloxene derivative, which can be responsible for the visible photoluminescence.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to American Institute of Physics.
Keywords: Photoemission study;porous silicon;porous silicon film;PSF
Department/Centre: Division of Chemical Sciences > Solid State & Structural Chemistry Unit
Division of Physical & Mathematical Sciences > Physics
Date Deposited: 06 Dec 2007
Last Modified: 19 Sep 2010 04:41
URI: http://eprints.iisc.ernet.in/id/eprint/12746

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