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Interface State Density Distribution in Amorphous/Crystalline Silicon Heterostructures

Iyer, Suman B and Kumar, Vikram and Harshavardhan, KS (1989) Interface State Density Distribution in Amorphous/Crystalline Silicon Heterostructures. In: Japanese Journal of Applied Physics, 28, Part-2 (5). L744-L746.

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Abstract

We present the first report of the interface state density distribution in undoped hydrogenated amorphous silicon/crystalline silicon heterostructures. The observed MIS (metal-insulator-semiconductor) like high frequency C(V) variation in this structure is used to obtain interface state density distribution in heterostructures with a-Si:H layer prepared either by reactive sputtering or glow discharge technique

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Institute of Pure and Applied Physics
Keywords: hydrogenated amorphous silicon; amorphous/crystalline heterojunction; interface states; high frequency capacitance; reactive sputtering; glow discharge technique
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Division of Physical & Mathematical Sciences > Physics
Date Deposited: 23 Feb 2008
Last Modified: 27 Aug 2008 13:09
URI: http://eprints.iisc.ernet.in/id/eprint/12881

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