Dagur, Pritesh and Mane, Anil U and Shivashankar, SA (2005) Thin films of $VO_2$ on glass by atomic layer deposition: microstructure and electrical properties. In: Journal of Crystal Growth, 275 (1-2). e1223-e1228.
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Thin films of semiconducting, monoclinic, $VO_2$(M) have been deposited on glass by atomic layer deposition (ALD). The composition and microstructure of the films have been examined by X-ray diffraction and scanning electron microscopy (SEM). The films deposited are $VO_2$(M) phase, as deposited, and have been obtained at temperatures as low as 400 1C. The films comprise largely of platelet morphology as illustrated by SEM. The semiconductor-metal transition near 340K leads to a large jump in resistivity in all the $VO_2$(M) films, on glass, as deposited. The formation of $VO_2$(M) phase has been shown to occur under very specific ALD conditions (ALD window). Growth kinetics, microstructure, and electrical properties have been studied as a function of deposition temperature.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Elsevier.|
|Keywords:||A1. Characterization; A1. Substrates; A1. X-ray diffraction; A2. Polycrystalline deposition; B1. Oxides; B2. Semiconducting materials; B2. Infrared devices.|
|Department/Centre:||Division of Chemical Sciences > Materials Research Centre|
|Date Deposited:||09 Mar 2008|
|Last Modified:||19 Sep 2010 04:43|
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