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# Electronic conduction in bulk selenium-tellurium $(Se_{1-x}Te_x)$ glasses at high pressures and at low temperatures

Parthasarathy, G and Gopal, ESR (1984) Electronic conduction in bulk selenium-tellurium $(Se_{1-x}Te_x)$ glasses at high pressures and at low temperatures. In: Bulletin of Materials Science, 6 (2). pp. 231-242.

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## Abstract

The electrical resistivity of bulk $Se_{1-x}Te_x$, glasses is reported as a function of pressure (up to 8 GPa) and temperature (down to 77 K). The activation energy for electronic conduction has been calculated at different pressures. The samples with $0\leq x \leq 0.06$ show a single activation energy throughout the temperature range of investigations. On the other hand samples with $0.08 \leq x \leq 0.3$ show two activation energies in the different regions of temperature. The observed behaviour has been explained on the basis of band picture of amorphous semiconductors.

Item Type: Journal Article Copyright of this article belongs to Indian Academy of Sciences Chalcogenide glasses;pressure induced semiconductor to metal transitions;amorphous semiconductors Division of Physical & Mathematical Sciences > Physics 02 Apr 2008 19 Sep 2010 04:43 http://eprints.iisc.ernet.in/id/eprint/13472

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