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DLTS investigation of iron level in gallium arsenide

UNSPECIFIED (1983) DLTS investigation of iron level in gallium arsenide. In: Nuclear Physics and Solid State Physics Symposium, 1980.

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Abstract

A DLTS (deep-level transient spectroscopy) system is described, which was used to show the presence, in GaAs:Fe n+-p diodes, of 1 impurity level at 0.63 eV, with a majority-carrier capture cross section of 1.63 X 10-17 cm2. The activation energy of Au in n-Si was detd. as 0.54 eV by this system, in agreement with the accepted value

Item Type: Conference Proceedings
Additional Information: Other details not yet available
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 31 Mar 2008
Last Modified: 27 Aug 2008 13:18
URI: http://eprints.iisc.ernet.in/id/eprint/13549

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