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Schottky Barrier Characteristics at Low Temperatures

Chandra, MM and Prasad, M (1983) Schottky Barrier Characteristics at Low Temperatures. In: Physica Status Solidi A, 77 (2). pp. 715-719.

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Abstract

The electrical characteristics of silicon metal-semiconductor diodes at low temperatures are presented. The voltage-temperature characteristics at constant current are studied in detail. Three distinct temperature regions can be identified; one from 300 to about 60 K, the next from 60 to 25 K, and the third from 25 to 4.2 K. The thermionic emission theory can be successfully used to explain the characteristics in the range 300 to 60 K. Below 60 K free-zeout of the free carriers begin and around 25 K the carriers are totally frozen out. Capacitance data in support of this theory are also presented. From the U-T characteristics it is shown how the barrier height at 0 K can be obtained. It is found that the ideality factor has no significant temperature dependence. The use of metal-semiconductor diodes as low temperature sensors is also briefly discussed.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to John Wiley and Sons, Inc.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 11 Apr 2008
Last Modified: 19 Sep 2010 04:44
URI: http://eprints.iisc.ernet.in/id/eprint/13655

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