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Effect of high pressure on the electrical resistivity of glassy oxygenated selenium

Parthasarathy, G and Asokan, S (1987) Effect of high pressure on the electrical resistivity of glassy oxygenated selenium. In: Journal of Materials Science Letters, 6 (3). pp. 313-314.

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Abstract

The application of pressure is one of the well-known methods for investigating the properties of glassy semiconductors ([1] and references cited therein). It is well established that small quantities of impurities can change the electrical and optical properties of some chalcogenide glasses [2]. In the case of amorphous selenium, the d.c. conductivity increases by six to seven orders of magnitude when small amounts (10 to 200 p.15.m.) of oxygen are added. Simultaneously the thermal activation energy of conductivity is lowered from 1.2 to 1.0 eV [3, 4]. Twaddell et al. [4] found the corresponding changes of the infrared transmission spectra in the range 4 to $25 \mu m$ and concluded that the conductivity alteration depended not only on the total concentration of impurity but also on the definite impurity bonding configuration. On the other hand, many other investigators found the conductivity of pure bulk glassy selenium to lie in the range $10^{-10}$ to $10^{-13} \Omega^{-1} cm^{-1}$ [5-12].

Item Type: Journal Article
Additional Information: Copyright for this article belongs to Springer.
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)
Date Deposited: 08 May 2008
Last Modified: 19 Sep 2010 04:44
URI: http://eprints.iisc.ernet.in/id/eprint/13859

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