ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Temperature dependent transport properties of $CuInSe_2-ZnO$ heterostructure solar cell

Dhananjay, * and Nagaraju, J and Krupanidhi, SB (2006) Temperature dependent transport properties of $CuInSe_2-ZnO$ heterostructure solar cell. In: Journal of Physics and Chemistry of Solids, 67 (8). pp. 1636-1642.

[img] PDF
ZnO.pdf
Restricted to Registered users only

Download (272Kb) | Request a copy

Abstract

Experimental study of dc and ac transport properties of $CuInSe_2/ZnO$ heterostructure is presented. The current–voltage (I–V) and frequency dependent capacitance (C–f) characteristics of $CuInSe_2/ZnO$ heterostructure were investigated in the temperature range 160–393 K. The heterostructure showed non-ideal behavior of I–V characteristics with an ideality factor of 3.0 at room temperature. Temperature dependent dc conductivity studies exhibited Arrhenius type behavior and revealed the presence of trap level. The $C^{-2}-V$ plot measured at frequency 50 kHz had shown non-linear behavior. An increase in capacitance with temperature was observed. The capacitance–frequency characteristics exhibited a transition between low frequency and the high frequency capacitance. As the temperature was lowered the transition occurred at lower frequencies. The frequency and temperature dependent device capacitance had shown a defect state having activation energy of 108 meV.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to Elsevier.
Keywords: Semiconductors;Vapor deposition;X-ray diffraction;Electrical properties
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)
Division of Chemical Sciences > Materials Research Centre
Date Deposited: 26 May 2008
Last Modified: 19 Sep 2010 04:45
URI: http://eprints.iisc.ernet.in/id/eprint/14045

Actions (login required)

View Item View Item