Adarsh, KV and Sangunni, KS and Kokenyesi, S and Ivan, I and Shipljak, M (2006) Luminescence in amorphous chalcogenide multilayers. In: Physics and Chemistry of Glasses - European Journal of Glass Science and Technology Part B, 47 (2). pp. 198-202.Full text not available from this repository.
Optical parameters of chalcogenide glass multilayers with 12-15 nm modulation lengths prepared by a thermal evaporation technique can be changed by laser irradiation. Photoluminescence (PL) studies were carried out on non-irradiated and irradiated multilayered samples of $a-Se/As_2S_3$ and $Bi/As_2S_3$. The $Bi/As_2S_3$ samples show higher luminescence efficiencies compared to $a-Se/As_2S_3$. Broadening of luminescence bands with decrease in Se/Bi layer thickness and with irradiation suggests the former is due to change in interface roughness and defects because of the enhanced structural disorder and the latter is due to initial or photo induced interdiffusion. From the deconvoluted photo (PL) spectrum, it is shown that peak PL intensity, full width at half maximum, and the PL quantum efficiency of particular defects which give rise to PL can be tuned by changing the sub layer thickness or by interdiffusion.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Society of Glass Technology.|
|Department/Centre:||Division of Physical & Mathematical Sciences > Physics|
|Date Deposited:||30 May 2008|
|Last Modified:||29 Feb 2012 05:26|
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