Bhattacharjee, Subhro and Maiti, Moitri and Sengupta, K (2007) Theory of tunneling conductance of graphene normal metal-insulator-superconductor junctions. In: Physical Reveiw B, 76 (184514). 184514-1-184514-7.
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We calculate the tunneling conductance of a graphene normal metal-insulator-superconductor (NIS) junction with a barrier of thickness d and with an arbitrary voltage $V_0$ applied across the barrier region. We demonstrate that the tunneling conductance of such a NIS junction is an oscillatory function of both d and $V_0$. We also show that the periodicity and amplitude of such oscillations deviate from their universal values in the thin barrier limit as obtained in an earlier work [S. Bhattacharjee and K. Sengupta, Phys. Rev. Lett. 97, 217001 (2006)] and become a function of the applied voltage $V_0$. Our results reproduce the earlier results on tunneling conductance of such junctions in the thin [S. Bhattacharjee and K. Sengupta, Phys. Rev. Lett. 97, 217001 (2006)] and zero [C. W. J. Beenakker, Phys. Rev. Lett. 97, 067007 (2006)] barrier limits as special limiting cases. We discuss the experimental relevance of our results.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to American Physical Society.|
|Department/Centre:||Division of Physical & Mathematical Sciences > Physics|
|Date Deposited:||03 Jun 2008|
|Last Modified:||19 Sep 2010 04:45|
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