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A novel Cu(II) chemical vapor deposition precursor: Synthesis, characterization, and chemical vapor deposition

Devi, Anjana and Goswami, J and Lakshmi, R and Shivashankar, SA and Chandrasekaran, S (1998) A novel Cu(II) chemical vapor deposition precursor: Synthesis, characterization, and chemical vapor deposition. In: Journal of Materials Research, 13 (3). pp. 687-692.

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Abstract

A nonfluorinated \beta-diketonate precursor, bis(t- butylacetoacetato)Cu(II) or Cu(tbaoac)2, was synthesized by modifying bis(dipivaloylmethanato)Cu(II) or Cu(dpm)2 for chemical vapor deposition (CVD) of copper. The complex was characterized by a variety of techniques, such as melting point determination, mass spectrometry, infrared spectroscopy, elemental analysis, thermogravimetric and differential thermal analysis, and x-ray diffraction. Cu(tbaoac)(2) has a higher sublimation rate than Cu(dpm)(2) over the temperature range 90- 150 degrees C. Pyrolysis of Cu(tbaoac)2 leads to the formation of copper films at 225 degrees C, compared to 330 degrees C for Cu(dpm)2. As-deposited copper films were highly dense, mirror-bright, adhered strongly to SiO2, and showed a resistivity of less than 2.9 \mu\Omega-cm at a thickness as low as 1300 A. A possible mechanism for the decomposition of the ligand tbaoac has been proposed.

Item Type: Journal Article
Additional Information: Copyright for this article belongs to Materials Research Society.
Keywords: metals;thin film;chemical vapor deposition (CVD)
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Division of Chemical Sciences > Organic Chemistry
Date Deposited: 10 Jan 2005
Last Modified: 19 Sep 2010 04:15
URI: http://eprints.iisc.ernet.in/id/eprint/1433

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