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Novel laser induced image storage by chemical modification of surfaces in in situ textured amorphous Ge films

Rao, Kameswara L and Harshavardhan, Solomon K and Selvarajan, A and Hegde, MS (1986) Novel laser induced image storage by chemical modification of surfaces in in situ textured amorphous Ge films. In: Applied Physics Letters, 49 (13). pp. 826-828.

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Abstract

A novel high contrast laser imaging based on chemical modification of the surfaces has been demonstrated in textured amorphous films of Ge. The process of imaging has been studied by x-ray initiated Auger electron spectroscopy, x-ray photoelectron spectroscopy, transmission electron microscopy, and microdensitometry. Laser irradiation transforms amorphous Ge and amorphous GeO phases to crystalline Ge and GeO phases, the GeO phase growing at the cost of the Ge phase. This leads to imaging, the contrast of which can be enhanced by annealing in air at 525°C. Photoenhanced chemical modification of the surfaces with concomitant topological rearrangments of the irradiated network has been suggested as the phenomenon responsible for imaging in these films. Such chemical modification of the surfaces has a large potential in high-resolution high-contrast laser imaging. Applied Physics Letters is copyrighted by The American Institute of Physics.

Item Type: Journal Article
Additional Information: Copyright belongs to American Institute of Physics.
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)
Division of Chemical Sciences > Solid State & Structural Chemistry Unit
Division of Electrical Sciences > Electrical Communication Engineering
Date Deposited: 16 Jun 2008
Last Modified: 19 Sep 2010 04:46
URI: http://eprints.iisc.ernet.in/id/eprint/14431

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