Ramkumar, K and Satyam, M (1987) Negative-resistance characteristics of polycrystalline silicon resistors. In: Journal of Applied Physics, 62 (1). pp. 174-176.
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This paper presents a theoretical analysis to explain the origin of the observed negative-resistance characteristics of polycrystalline silicon resistors. This analysis is based on the effects of self-heating of the resistor on the transportation of carriers across the grain-boundary barrier.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to American Institute of Physics.|
|Department/Centre:||Division of Electrical Sciences > Electrical Communication Engineering|
|Date Deposited:||17 Jun 2008|
|Last Modified:||19 Sep 2010 04:46|
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