Negative-resistance characteristics of polycrystalline silicon resistors

Ramkumar, K and Satyam, M (1987) Negative-resistance characteristics of polycrystalline silicon resistors. In: Journal of Applied Physics, 62 (1). pp. 174-176.

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Abstract

This paper presents a theoretical analysis to explain the origin of the observed negative-resistance characteristics of polycrystalline silicon resistors. This analysis is based on the effects of self-heating of the resistor on the transportation of carriers across the grain-boundary barrier.

Item Type:	Journal Article
Additional Information:	Copyright of this article belongs to American Institute of Physics.
Department/Centre:	Division of Electrical Sciences > Electrical Communication Engineering
Date Deposited:	17 Jun 2008
Last Modified:	19 Sep 2010 04:46
URI:	http://eprints.iisc.ernet.in/id/eprint/14472

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