Kalyanaraman, V and Chandra, Mohan M and Kumar, Vikram (1983) Deep levels related to ion-implanted tellurium in silicon. In: Journal of Applied Physics, 54 (11). pp. 6417-6420.
Restricted to Registered users only
Download (256Kb) | Request a copy
Deep impurity levels due to ion-implanted Te in n-Si are studied. Two donor levels at $E_c$ - 0.13 and $E_c$ - 0.56 eV are obtained by using deep level transient spectroscopy. Thermal electron capture cross sections for both levels are too large to be measured. Electron photoionization cross section spectrum confirms the $E_c$ - 0.56 level and also reveals an excited state 0.45 eV above the ground state.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to American Institute of Physics.|
|Department/Centre:||Division of Physical & Mathematical Sciences > Physics|
|Date Deposited:||04 Jul 2008|
|Last Modified:||19 Sep 2010 04:46|
Actions (login required)