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Direct Measurement of Interface State Electron Capture Cross-Section in MOS System by DLTS Technique

Gupta, DS and Chandra, MM and Kumar, V (1983) Direct Measurement of Interface State Electron Capture Cross-Section in MOS System by DLTS Technique. In: Physica Status Solidi A, 80 (2). K209-K211.

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Abstract

The interface states at the $Si-Si0_2$ interface are characterized by their distribution in the energy band gap and capture cross-sections for electrons and holes.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to John Wiley & Sons, Inc.
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 24 Jun 2008
Last Modified: 19 Sep 2010 04:46
URI: http://eprints.iisc.ernet.in/id/eprint/14642

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