Singh, MP and Shalini, K and Shivashankar, SA and Deepak, GC and Bhat, N and Shripathi, T (2008) Microstructure, crystallinity, and properties of low-pressure MOCVD-grown europium oxide films. In: Materials Chemistry and Physics, 110 (2-3). pp. 337-343.
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A study of growth, structure, and properties of $Eu_2O_3$ thin films were carried out. Films were grown at $500-600^o C$ temperature range on Si(100) and fused quartz from the complex of $Eu(acac)_3$. Phen by low pressure metalorganic chemical vapor deposition technique which has been rarely used for $Eu_2O_3$ deposition.These films were polycrystalline. Depending on growth conditions and substrates employed, these films had also possessed a parasitic phase. This phase can be removed by post-deposition annealing in oxidizing ambient. Morphology of the films was characterized by well-packed spherical mounds. Optical measurements exhibited that the bandgap of pure $Eu_2O_3$ phase was 4.4 eV. High frequency 1MHz capacitance–voltage (C–V) measurements showed that the dielectric constant of pure $Eu_2O_3$ film was about 12. Possible effects of cation and oxygen deficiency and parasitic phase on the optical and electrical properties of $Eu_2O_3$ films have been briefly discussed.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Elsevier.|
|Keywords:||MOCVD;Rare earth oxides;Thin films;Microstructure Properties.|
|Department/Centre:||Division of Chemical Sciences > Materials Research Centre
Division of Electrical Sciences > Electrical Communication Engineering
|Date Deposited:||10 Jul 2008|
|Last Modified:||19 Sep 2010 04:47|
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