ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Enhancement of charge and energy storage in sol-gel derived pure and La-modified $PbZrO_3$ thin films

Parui, Jayanta and Krupanidhi, SB (2008) Enhancement of charge and energy storage in sol-gel derived pure and La-modified $PbZrO_3$ thin films. In: Applied Physics Letters, 92 (19). pp. 192901-1.

[img] PDF
fulltext.pdf
Restricted to Registered users only

Download (148Kb) | Request a copy

Abstract

Antiferroelectric lanthanum-modified $PbZrO_3$ thin films with La contents between 0 and 6 at. % have been deposited on Pt(111) $/Ti/SiO_2/Si$ substrate by sol-gel route. On the extent of La-modification, maximum polarization $(P_{max})$ and recoverable energy density (W) have been enhanced followed by their subsequent reduction. A maximum $P_{max}$ $(\sim 0.54 C/m^2$ at $\sim 60 MV/m$ as well as a maximum W $(\sim 14.9 J /cc$ at $\sim 60 MV/m)$ have been achieved on 5% La modification. Both $P_{max}$ and W have been found to be strongly dependent on La-induced crystallographic orientations.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to American Institute of Physics.
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 15 Jul 2008
Last Modified: 19 Sep 2010 04:47
URI: http://eprints.iisc.ernet.in/id/eprint/14957

Actions (login required)

View Item View Item