Yuvaraj, D and Rao, Narasimha K (2008) Optical and electrical properties of ZnO films deposited by activated reactive evaporation. In: Vacuum, 82 (11). pp. 1274-1279.
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ZnO films having good transmittance and conductivity were deposited by activated reactive evaporation of Zn metal on glass and Si substrates at room temperature. Optical constants and thickness of ZnO films deposited under different deposition conditions were determined both by spectroscopic ellipsometry (SE) and spectrophotometry. Structural studies showed that the films exhibited a polycrystalline wurtzite structure with the preferential oriented along the (002) plane. Electrical studies by four probe technique showed that the sheet resistance of the films varied from $10^6$ to 50 \Omega /square depending upon the oxygen partial pressure used during deposition, and this sheet resistance value increased with time. The increase in sheet resistance with time was found to be dependent on the surface morphology of the film and on the substrate over which they were deposited.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Elsevier.|
|Keywords:||ZnO films;Refractive index;Sheet resistance;Structural properties.|
|Department/Centre:||Division of Physical & Mathematical Sciences > Instrumentation and Applied Physics (Formally ISU)|
|Date Deposited:||06 Aug 2008|
|Last Modified:||19 Sep 2010 04:48|
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